Datasheet > DIM250PHM33-TS000

DIM250PHM33-TS000

更新时间： 2024-11-24 01:17:23

品牌	Logo	应用领域
DYNEX		双极性晶体管
页数	文件大小	规格书
8页	396K
描述
Half Bridge IGBT Module

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中文翻译

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数据手册

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DIM250PHM33-TS000 数据手册

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DIM250PHM33-TS000

Half Bridge IGBT Module

Replaces DS6092-1

DS6092-2 September 2014 (LN31957)

FEATURES

KEY PARAMETERS



10µs Short Circuit Withstand

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

3300V

2.2V

250A

500A

High Thermal Cycling Capability

(max)

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base with AlN Substrates

* Measured at the auxiliary terminals

APPLICATIONS



High Reliability Inverters

Motor Controllers

Traction Auxiliaries

Choppers

1(E1/C2)

2(C1)

3(E2)

5(E¹)

4(G¹)

8(C¹)

7(E²)

6(G²)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM250PHM33-TS000 is a half bridge 3300V,

soft punch through n-channel enhancement mode,

insulated gate bipolar transistor (IGBT) chopper

module configured with the lower arm of the bridge

controlled. The IGBT has a wide reverse bias safe

operating area (RBSOA). This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

Fig. 1 Circuit configuration

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM250PHM33-TS000

Outline type code: P

Note: When ordering, please use the complete part

number

(See Fig. 11 for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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