Datasheet > DIM2400ESS12-A000_10

DIM2400ESS12-A000_10

更新时间： 2024-11-23 12:51:43

品牌	Logo	应用领域
DYNEX		开关双极性晶体管
页数	文件大小	规格书
8页	367K
描述
Single Switch IGBT Module

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数据手册

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DIM2400ESS12-A000

Single Switch IGBT Module

Replaces DS5840-1.1

DS5840-2 October 2010 (LN27616)

FEATURES

KEY PARAMETERS



10µs Short Circuit Withstand

Non Punch Through Silicon

Isolated Cu Base with Al₂O₃Substrates

Lead Free construction

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

1200V

2.2V

2400A

4800A

(max)

* Measured at the power busbars, not the auxiliary terminals

APPLICATIONS

9(C)

7(C)

5(C)



Motor Controllers

Traction Drives

3(C)

2(G)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

1(E)

8(E)

6(E)

4(E)

The DIM2400ESS12-A000 is a single switch 1200V,

n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

Fig. 1 Circuit configuration

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM2400ESS12-A000

Outline type code: E

Note: When ordering, please use the complete part

number

(See Fig. 11 for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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