Datasheet > DF3A5.6CT(TPL3)

DF3A5.6CT(TPL3)

更新时间： 2024-11-24 21:18:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	151K
描述
Zener Diodes ESD Zener 5.6V 65pF 3.0uA

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DF3A5.6CT(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.7
Base Number Matches：	1

DF3A5.6CT(TPL3) 数据手册

DF3A5.6CT

TOSHIBA Diodes for Protecting Against ESD

DF3A5.6CT

Product for Use Only as Protection against Electrostatic Discharge (ESD).

Unit :mm

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

CST3

z The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

CST3

Junction temperature

１．CATHODE1

２．CATHODE2

３．ANODE

Storage temperature range

−55 to 150

°C

stg

* : Mounted on FR4 board (10 mm × 10 mm × 1 mm(t))

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

―

JEDEC

JEITA

1-1S1C

TOSHIBA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Weight: 0.75 mg (typ.)

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5 mA

Min

Typ.

Max

Unit

5.6

―

6.0

5.3

―

Dynamic impedance

Reverse current

= 5 mA

=2.5 V

―

1.0

μA

Terminal capacitance

(between Cathode and Anode)

= 0 V, f = 1 MHz

―

2012-07-11

12 3 4

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