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DF3A5.6FV PDF预览

DF3A5.6FV

更新时间: 2024-11-27 04:38:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 160K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A5.6FV 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOD包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.66配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:40 ΩJESD-30 代码:R-PDSO-F3
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.15 W认证状态:Not Qualified
标称参考电压:5.6 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.19%
工作测试电流:5 mA

DF3A5.6FV 数据手册

 浏览型号DF3A5.6FV的Datasheet PDF文件第2页浏览型号DF3A5.6FV的Datasheet PDF文件第3页 
DF3A5.6FV  
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type  
DF3A5.6FV  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
1.2±0.05  
0.8±0.05  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
1
2
3
Because two devices are mounted on an ultra compact package, it is  
possible to allow reducing the number of the parts and the mounting  
cost.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
Rating  
Unit  
P*  
150  
150  
mW  
°C  
1.CATHODE1  
2.CATHODE2  
3.ANODE  
Junction temperature  
T
j
VESM  
Storage temperature range  
T
stg  
55~150  
°C  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
1-1Q1B  
Weight: 0.0015 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.3  
5.6  
6.0  
40  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
V
= 2.5 V  
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0, f = 1MHz  
65  
pF  
1
2007-11-01  

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