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DF3A5.6LFU,LF(T PDF预览

DF3A5.6LFU,LF(T

更新时间： 2024-11-24 21:20:23
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 140K
描述
Zener Diode

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中文翻译

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DF3A5.6LFU,LF(T 技术参数

生命周期：ActiveReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.71二极管类型：ZENER DIODE
Base Number Matches：1

DF3A5.6LFU,LF(T 数据手册

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DF3A5.6LFU  
TOSHIBA Diodes for Protecting against ESD  
DF3A5.6LFU  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD)  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
•
•
The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Low Terminal capacitance: C = 8.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55 to 125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
⎯
⎯
TOSHIBA  
1-2P1A  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.3  
⎯
5.6  
⎯
6.0  
50  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
= 3.5 V  
R
⎯
⎯
1.0  
μA  
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
VR = 0 V, f = 1 MHz  
―
8
―
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
± 8 kV  
IEC61000-4-2  
(Contact discharge)  
Criterion: No damage to device elements  
Start of commercial production  
2003-02  
1
2014-03-01  
123

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