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DF3A5.6LFV PDF预览

DF3A5.6LFV

更新时间: 2024-11-24 04:38:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 131K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A5.6LFV 数据手册

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DF3A5.6LFV  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF3A5.6LFV  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
1.2±0.05  
0.8±0.05  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
1
2
The mounting of two devices in an ultra-compact package enables a  
reduction in the number of parts and in the mounting cost.  
3
Low terminal capacitance: C = 8.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Unit  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
150*  
150  
mW  
°C  
1. CATHODE1  
2. CATHODE2  
3. ANODE  
Junction temperature  
T
j
VESM  
Storage temperature range  
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-1Q1B  
Weight: 1.5 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5 mm  
0.45 mm  
0.45 mm  
0.4 mm  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.3  
5.6  
3
6.0  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
= 3.5 V  
R
1.0  
μA  
R
Terminal capacitance  
(between cathode and anode)  
C
T
VR = 0 V, f = 1 MHz  
8
pF  
1
2007-11-01  

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