Datasheet > DF3A5.6LFV(TPL3Z)

DF3A5.6LFV(TPL3Z)

更新时间： 2024-11-24 20:48:15

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
6页	230K
描述
Zener Diode

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中文翻译

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技术参数
数据手册

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DF3A5.6LFV(TPL3Z) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.71
二极管类型：	ZENER DIODE	Base Number Matches：	1

DF3A5.6LFV(TPL3Z) 数据手册

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DF3A5.6LFV

TOSHIBA Diodes for Protecting against ESD

DF3A5.6LFV

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

1.2±0.05

0.8±0.05

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

•

The mounting of two devices in an ultra-compact package enables a

reduction in the number of parts and in the mounting cost.

Low terminal capacitance: C = 8.0 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Unit

Characteristic

Power dissipation

Symbol

Rating

150*

150

°C

1. CATHODE1

2. CATHODE2

3. ANODE

VESM

Junction temperature

Storage temperature range

stg

−55 to 150

°C

JEDEC

⎯

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEITA

TOSHIBA

1-1Q1B

Weight: 1.5 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

0.5 mm

0.45 mm

0.4 mm

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

5.3

⎯

5.6

6.0

⎯

Dynamic impedance

Reverse current

= 3.5 V

⎯

1.0

μA

Terminal capacitance

(between cathode and anode)

V_R= 0 V, f = 1 MHz

―

Start of commercial production

2005-05

2014-03-01

12 3 4 5 6

中文翻译

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