DF3A6.2F

更新时间： 2024-11-24 13:01:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	162K
描述
Protection Diodes against ESD, DF3A6.2F

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中文翻译

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技术参数
数据手册

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DF3A6.2F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.75
二极管类型：	ZENER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

DF3A6.2F 数据手册

DF3A6.2FE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A6.2FE

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

•

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Symbol

Rating

Unit

100

125

°C

Junction temperature

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-2SA1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0023 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

5.8

⎯

6.2

⎯

6.6

Dynamic impedance

Reverse current

= 3 V

⎯

1.0

μA

Terminal capacitance

(between Cathode and Anode)

= 0, f = 1 MHz

―

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

2007-11-01

12 3

中文翻译

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与DF3A6.2F相关器件

型号	品牌	获取价格	描述	数据表
DF3A6.2FE	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A6.2FU	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A6.2FU(TE85L)	TOSHIBA	获取价格	ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,6.2V V(Z),6.5%,SOT-323
DF3A6.2FU(TE85L,F)	TOSHIBA	获取价格	ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,6.2V V(Z),6.5%,SOT-323
DF3A6.2FU(TE85LF)	TOSHIBA	获取价格	Zener Diode
DF3A6.2FV	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A6.2LFE	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A6.2LFU	TOSHIBA	获取价格	DIODE 6.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, 1-2P1A, USM, 3 PIN, V
DF3A6.2LFU(TE85L,F)	TOSHIBA	获取价格	ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,6.2V V(Z),4.8%,SOT-323
DF3A6.2LFV	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).

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