Datasheet > DF3A6.8F

DF3A6.8F

更新时间： 2024-11-06 14:56:43

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
4页	319K
描述
Unidirectional TVS Diode (ESD Protection Diode), SOT-346(S-Mini)

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DF3A6.8F 数据手册

DF3A6.8F

TOSHIBA Diodes For Protecting Against ESD

DF3A6.8F

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

•

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Symbol

Rating

Unit

150

°C

Junction temperature

Storage temperature range

stg

−55 to 150

°C

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1S

Weight: 12 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

6.4

―

6.8

7.2

Dynamic impedance

Reverse current

= 5 V

―

0.5

μA

Terminal capacitance

(between Cathode and Anode)

= 0 V, f = 1 MHz

―

Start of commercial production

2005-12

2017-12-12

12 3 4

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