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DF3A6.2FU PDF预览

DF3A6.2FU

更新时间: 2024-02-21 01:29:38
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
3页 163K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A6.2FU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOD
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:50 Ω
JESD-30 代码:R-PDSO-F3元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.15 W
认证状态:Not Qualified标称参考电压:6.2 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:4.84%工作测试电流:5 mA

DF3A6.2FU 数据手册

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DF3A6.2FU  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF3A6.2FU  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-2P1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.006 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.8  
6.2  
6.6  
30  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
V
= 3 V  
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0, f = 1 MHz  
55  
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30 kV  
Criterion: No damage to device elements  
1
2007-11-01  

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