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DF3A6.8LFE_07 PDF预览

DF3A6.8LFE_07

更新时间： 2024-11-27 04:38:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 128K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

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DF3A6.8LFE_07 数据手册

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DF3A6.8LFE  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF3A6.8LFE  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
•
•
The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Low terminal capacitance: C = 6.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55 ~ 125  
°C  
JEDEC  
JEITA  
⎯
⎯
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
1-2SA1A  
Weight: 0.0023 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
I
= 5 mA  
= 5 mA  
= 0.5 mA  
6.5  
⎯
⎯
⎯
6.8  
⎯
⎯
⎯
7.1  
50  
V
Ω
Z
Z
Z
Z
Dynamic impedance  
Knee dynamic impedance  
Reverse current  
Z
Z
Z
100  
0.5  
Ω
ZK  
I
V
V
= 5 V  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0 V, f = 1 MHz  
⎯
6.0  
⎯
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 8 kV  
Criterion: No damage to device elements  
1
2007-11-01  
123

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