Datasheet > DF3A6.8UFU,LF(T

DF3A6.8UFU,LF(T

更新时间： 2024-11-05 19:19:31

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	164K
描述
Trans Voltage Suppressor Diode

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技术参数
数据手册

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DF3A6.8UFU,LF(T 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.67	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

DF3A6.8UFU,LF(T 数据手册

DF3A6.8UFU

TOSHIBA Diodes for Protecting against ESD

DF3A6.8UFU

ESD Protection Diode

* This device is intended for electrostatic discharge (ESD) protection and

Unit: mm

should not be used for any other purpose, including the constant-voltage

diode applications.

Abusolute Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Symbol

Rating

Unit

100

150

°C

Junction temperature

Storage temperature range

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

―

JEDEC

JEITA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

1-2P1A

TOSHIBA

Weight: 6.0 mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse stand-off voltage

Reverse voltage

―

5.3

―

6.8

―

5.0

―

RWM

I = 1 mA

Reverse current

= 5 V

RWM

0.5

μA

Total capacitance

(between Cathode and Anode)

―

2.5

= 0 V, f = 1 MHz

Forward stand-off voltage

―

I = 1 mA

Marking

Equivalent Circuit (top view)

Start of commercial production

2007-11

2016-09-21

12 3 4

中文翻译

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