DF3A6.8LCT

更新时间： 2024-11-05 13:00:27

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管齐纳二极管测试光电二极管
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DF3A6.8LCT 数据手册

DF3A6.8FE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A6.8FE

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

•

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Symbol

Rating

Unit

100

125

°C

Junction temperature

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-2SA1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0023 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

= 0.5 mA

6.4

⎯

6.8

⎯

7.2

Dynamic impedance

Knee dynamic impedance

Reverse current

⎯

= 5 V

0.5

μA

Terminal capacitance

(between Cathode and Anode)

= 0, f = 1MHz

―

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

2007-11-01

12 3

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