Datasheet > DF3A6.2LFV(TPL3.Z)

DF3A6.2LFV(TPL3.Z)

更新时间： 2024-11-28 06:09:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	127K
描述
Zener Diode

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DF3A6.2LFV(TPL3.Z) 数据手册

DF3A6.2LFV

TOSHIBA Diodes for Protecting against ESD

DF3A6.2LFV

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

1.2±0.05

0.8±0.05

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

•

The mounting of two devices in an ultra-compact package enables a

reduction in the number of parts and in the mounting cost.

Low terminal capacitance: C = 6.5 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

1. CATHODE1

2. CATHODE2

3. ANODE

150*

150

°C

VESM

Junction temperature

Storage temperature range

stg

−55 to 150

°C

JEDEC

⎯

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEITA

TOSHIBA

1-1Q1B

Weight: 0.0015 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

0.5 mm

0.45 mm

0.4 mm

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

5.9

⎯

6.2

⎯

6.5

Dynamic impedance

Reverse current

= 5 V

⎯

2.5

μA

Terminal capacitance

(between cathode and anode)

= 0 V, f = 1 MHz

⎯

6.5

⎯

Start of commercial production

2005-05

2014-03-01

12 3

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