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DF3A5.6LFE PDF预览

DF3A5.6LFE

更新时间: 2024-09-17 04:38:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 137K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A5.6LFE 数据手册

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DF3A5.6LFE  
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type  
DF3A5.6LFE  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z Because two devices are mounted on an ultra compact package, it is  
possible to allow reducing the number of the parts and the mounting cost.  
z Low terminal capacitance: C = 8.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-2SA1A  
Weight: 2.3 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
5.6  
6.0  
50  
V
5.3  
Z
Dynamic impedance  
Reverse current  
Z
= 5mA  
Z
Z
I
V
V
=3.5V  
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0 V, f = 1 MHz  
8
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 8kV  
Judgment contents: No element destruction  
1
2007-11-01  

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