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Datasheet > DF3A5.6LFU(TE85L,F)
DF3A5.6LFU(TE85L,F) PDF预览

DF3A5.6LFU(TE85L,F)

更新时间： 2024-11-07 14:49:23
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
3页 106K
描述
ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,5.6V V(Z),5.3%,SOT-323

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DF3A5.6LFU(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.8
Is Samacsys：N二极管类型：ZENER DIODE
最大动态阻抗：50 Ω最高工作温度：125 °C
最大功率耗散：0.1 W标称参考电压：5.6 V
子类别：Voltage Reference Diodes表面贴装：YES
最大电压容差：5.3%工作测试电流：5 mA
Base Number Matches：1

DF3A5.6LFU(TE85L,F) 数据手册

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DF3A5.6LFU  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF3A5.6LFU  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
•
•
The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Low Terminal capacitance: C = 8.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
⎯
⎯
TOSHIBA  
1-2P1A  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.3  
⎯
5.6  
⎯
6.0  
50  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
= 3.5 V  
R
⎯
⎯
1.0  
μA  
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
VR = 0 V, f = 1 MHz  
―
8
―
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
± 8 kV  
IEC61000-4-2  
(Contact discharge)  
Criterion: No damage to device elements  
1
2007-11-01  
123

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