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DF3A5.6FE(TPL3,F) PDF预览

DF3A5.6FE(TPL3,F)

更新时间： 2024-11-24 14:48:59
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
3页 151K
描述
DIODE 5.6 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ULTRA COMPACT, 1-2SA1A, ESM, 3 PIN, Voltage Regulator Diode

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DF3A5.6FE(TPL3,F) 技术参数

生命周期：Obsolete包装说明：R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.71配置：COMMON ANODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：ZENER DIODE
JESD-30 代码：R-PDSO-F3元件数量：2
端子数量：3最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：UNIDIRECTIONAL
最大功率耗散：0.1 W标称参考电压：5.6 V
表面贴装：YES技术：ZENER
端子形式：FLAT端子位置：DUAL
最大电压容差：6.19%工作测试电流：5 mA
Base Number Matches：1

DF3A5.6FE(TPL3,F) 数据手册

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DF3A5.6FE  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF3A5.6FE  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
100  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
JEDEC  
JEITA  
⎯
⎯
TOSHIBA  
1-2SA1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.0023 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
5.6  
―
6.0  
40  
V
Ω
5.3  
―
Z
Z
Dynamic impedance  
Reverse current  
Z
= 5mA  
Z
I
V
V
=2.5V  
―
―
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0, f = 1MHz  
―
65  
―
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30kV  
Criterion: No damage to device elements  
1
2007-11-01  
123

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