DF2S6.8UCT

更新时间： 2024-11-24 13:07:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	116K
描述
DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, CST2, 1-1P1A, 2 PIN, Transient Suppressor

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中文翻译

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技术参数
数据手册

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DF2S6.8UCT 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-XBCC-N2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.69
Is Samacsys：	N	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-XBCC-N2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.15 W
认证状态：	Not Qualified	最大重复峰值反向电压：	5 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	NO LEAD	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

DF2S6.8UCT 数据手册

DF2S6.8FS

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF2S6.8FS

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

0.6±0.05

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

z 2terminal ultra small package suitable for mounting on small space.

0.2

±0.05

Absolute Maximum Ratings (Ta = 25°C)

0.1±0.05

0.07

Characteristic

Power dissipation

Symbol

Rating

Unit

+0.02

0.48

150*

150

°C

-0.03

Junction temperature

Storage temperature range

stg

−55~150

°C

fSC

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-1L1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0006 g (typ.)

*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.

Pad Dimension(Reference)_{Unit : mm}

0.85

0.26

0.21

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5mA

Min

Typ.

Max

Unit

6.4

―

6.8

―

7.2

Ω

Dynamic impedance

Reverse current

= 5mA

= 5V

―

0.5

μA

Total capacitance

―

= 0 V, f = 1 MHz

2007-11-01

12 3

中文翻译

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与DF2S6.8UCT相关器件

型号	品牌	获取价格	描述	数据表
DF2S6.8UCT(TPL3)	TOSHIBA	获取价格	ESD PROTECTION DIODE (STANDARD TYPE, SINGLE)
DF2S6.8UFS	TOSHIBA	获取价格	Not Recommended for New Design
DF2S6M4CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)
DF2S6M4FS	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-923
DF2S6M4SL	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-962(SL2)
DF2S6M5CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-882(CST2)
DF2S6M5SL	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-962(SL2)
DF2S6P1CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)
DF2S6P2CTC	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-963(CST2C)
DF2S6P2FU	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-323(USC)

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