Datasheet > DF2S6P1CT

DF2S6P1CT

更新时间： 2024-11-25 14:57:35

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
8页	341K
描述
Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)

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DF2S6P1CT 数据手册

DF2S6P1CT

ESD Protection Diodes Silicon Epitaxial Planar

DF2S6P1CT

1. General

The DF2S6P1CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

The DF2S6P1CT has realized high IPP, in order to protect a semiconductor devices from the indirect lightning

stroke and the transition voltage (at the time of power activation).

Furthermore, the DF2S6P1CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications

that require a small footprint.

2. Applications

Mobile Equipment

� Smartphones

� Tablets

� Notebook PCs

Desktop PCs

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

3. Features

(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V)

(2) Protects devices with its high ESD performance.

(VESD = ±30 kV (Contact / Air) @IEC61000-4-2)

(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.23 Ω (typ.))

(4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.

(VC = 12 V@IPP = 10 A (typ.))

(5) Compact package is suitable for use in high density board layouts such as in mobile devices.

(1.0 mm × 0.6 mm size (Nickname: CST2))

4. Packaging

CST2

Start of commercial production

2018-06

2022-11-02

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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