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DF2S6P1CT PDF预览

DF2S6P1CT

更新时间: 2024-11-06 14:57:35
品牌 Logo 应用领域
东芝 - TOSHIBA 电视
页数 文件大小 规格书
8页 341K
描述
Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)

DF2S6P1CT 数据手册

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DF2S6P1CT  
ESD Protection Diodes Silicon Epitaxial Planar  
DF2S6P1CT  
1. General  
The DF2S6P1CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device  
interfaces and other applications to protect against static electricity and noise.  
The DF2S6P1CT has realized high IPP, in order to protect a semiconductor devices from the indirect lightning  
stroke and the transition voltage (at the time of power activation).  
Furthermore, the DF2S6P1CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications  
that require a small footprint.  
2. Applications  
Mobile Equipment  
Smartphones  
Tablets  
Notebook PCs  
Desktop PCs  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
3. Features  
(1) Suitable for use with a 5.0 V signal line. (VRWM 5.5 V)  
(2) Protects devices with its high ESD performance.  
(VESD = ±30 kV (Contact / Air) @IEC61000-4-2)  
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.  
(RDYN = 0.23 (typ.))  
(4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.  
(VC = 12 V@IPP = 10 A (typ.))  
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.  
(1.0 mm × 0.6 mm size (Nickname: CST2))  
4. Packaging  
CST2  
Start of commercial production  
2018-06  
©2018-2022  
2022-11-02  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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