Datasheet > DF2S8.2S

DF2S8.2S

更新时间： 2024-02-09 05:15:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	121K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

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中文翻译

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技术参数
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DF2S8.2S 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.72	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	30 Ω	JESD-30 代码：	R-PDSO-F2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	0.15 W	认证状态：	Not Qualified
标称参考电压：	8.2 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	最大电压容差：	6.1%
工作测试电流：	5 mA	Base Number Matches：	1

DF2S8.2S 数据手册

DF2S8.2S

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF2S8.2S

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

z 2terminal ultra small package suitable for mounting on small space.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

⎯

JEITA

TOSHIBA

1-1K1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.001 g (typ.)

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5 mA

Min

Typ.

Max

Unit

7.7

―

8.2

―

8.7

Ω

Dynamic impedance

Reverse current

= 5 mA

= 6.5 V

―

0.5

―

μA

Total capacitance

= 0 V, f = 1 MHz

Guaranteed Level of ESD Immunity

Marking

Equivalent Circuit (Top View)

Test Condition

ESD Immunity Level

±30 kV

IEC61000-4-2

(contact discharge)

Criterion: No damage to device elements

2007-11-01

12 3

中文翻译

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