是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | 电容: | 300 µF |
电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR | 介电材料: | ALUMINUM (WET) |
JESD-609代码: | e3 | 漏电流: | 0.3 mA |
安装特点: | CHASSIS MOUNT | 负容差: | 10% |
端子数量: | 2 | 最高工作温度: | 55 °C |
最低工作温度: | -20 °C | 封装形状: | CYLINDRICAL PACKAGE |
极性: | POLARIZED | 正容差: | 20% |
额定(直流)电压(URdc): | 360 V | 表面贴装: | NO |
Delta切线: | 0.1 | 端子面层: | Tin (Sn) |
端子形状: | LUG | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DF3 | GREATECS |
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Horizontal SMT Detector Switches with Side Stem | |
DF-3 | KINGBRIGHT |
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6.8mm x 19.9mm LIGHT BARS | |
DF300R07PE4_B6 | INFINEON |
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Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20 | |
DF300R07PE4B6BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
DF300R07W2H3_B77 | INFINEON |
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Booster | |
DF300R12KE3 | INFINEON |
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62 mm 1200V 300A 斩波器 IGBT 模块, 是您设计工作的不二之选. | |
DF300R12KE3HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 480A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
DF3066S170D | TOKEN |
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DF-B Dielectric Filters | |
DF30AA120 | SANREX |
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DIODE(THREE PHASES BRIDGE TYPE) | |
DF30AA160 | SANREX |
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DIODE(THREE PHASES BRIDGE TYPE) |