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DF2S8.2SC(TPL3) PDF预览

DF2S8.2SC(TPL3)

更新时间: 2024-01-31 09:34:06
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
4页 165K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,8.2V V(Z),6%,SMT

DF2S8.2SC(TPL3) 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:12 weeks风险等级:5.8
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:18 Ω元件数量:1
最高工作温度:150 °C最大功率耗散:0.15 W
标称参考电压:8.2 V子类别:Voltage Reference Diodes
表面贴装:YES最大电压容差:6%
工作测试电流:5 mABase Number Matches:1

DF2S8.2SC(TPL3) 数据手册

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DF2S8.2SC  
TOSHIBA Diodes for Protecting against ESD  
DF2S8.2SC  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
*This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
Absolute Maximum Ratings (Ta = 25°C)  
0.27±0.02  
0.32±0.03  
Characteristic  
Power dissipation  
Symbol  
Rating  
Unit  
0.025±0.015  
P*  
150  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55 to 150  
°C  
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,  
pad dimension of 4 × 4 mm.  
1. Cathode  
2. Anode  
SC2  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-1R1A  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Weight: 0.17mg (typ.)  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
V
Z
I
I
7.7  
10  
8.7  
18  
Z
Z
Z
Dynamic impedance  
Reverse current  
= 5mA  
Z
I
V
V
= 6.5V  
0.5  
μA  
pF  
R
R
R
Total capacitance  
C
T
= 0 V, f = 1 MHz  
Marking  
Equivalent Circuit (top view)  
1
2009-05-11  

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