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DF2S8.2SC(TPL3) PDF预览

DF2S8.2SC(TPL3)

更新时间： 2024-11-05 21:10:07
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
4页 165K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,8.2V V(Z),6%,SMT

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DF2S8.2SC(TPL3) 技术参数

生命周期：ActiveReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：12 weeks风险等级：5.8
配置：SINGLE二极管类型：ZENER DIODE
最大动态阻抗：18 Ω元件数量：1
最高工作温度：150 °C最大功率耗散：0.15 W
标称参考电压：8.2 V子类别：Voltage Reference Diodes
表面贴装：YES最大电压容差：6%
工作测试电流：5 mABase Number Matches：1

DF2S8.2SC(TPL3) 数据手册

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DF2S8.2SC  
TOSHIBA Diodes for Protecting against ESD  
DF2S8.2SC  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
*This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
２
Absolute Maximum Ratings (Ta = 25°C)  
１
0.27±0.02  
0.32±0.03  
Characteristic  
Power dissipation  
Symbol  
Rating  
Unit  
0.025±0.015  
P*  
150  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,  
pad dimension of 4 × 4 mm.  
1. Cathode  
2. Anode  
SC2  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
1-1R1A  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Weight: 0.17mg (typ.)  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
V
Z
I
I
7.7  
―
―
―
―
―
―
10  
8.7  
18  
Z
Z
Z
Dynamic impedance  
Reverse current  
= 5mA  
Ω
Z
I
V
V
= 6.5V  
0.5  
―
μA  
pF  
R
R
R
Total capacitance  
C
T
= 0 V, f = 1 MHz  
Marking  
Equivalent Circuit (top view)  
1
2009-05-11  
1234

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