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DF2S6M4SL PDF预览

DF2S6M4SL

更新时间: 2024-01-22 18:18:47
品牌 Logo 应用领域
东芝 - TOSHIBA 电视
页数 文件大小 规格书
9页 369K
描述
Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-962(SL2)

DF2S6M4SL 数据手册

 浏览型号DF2S6M4SL的Datasheet PDF文件第2页浏览型号DF2S6M4SL的Datasheet PDF文件第3页浏览型号DF2S6M4SL的Datasheet PDF文件第4页浏览型号DF2S6M4SL的Datasheet PDF文件第5页浏览型号DF2S6M4SL的Datasheet PDF文件第6页浏览型号DF2S6M4SL的Datasheet PDF文件第7页 
DF2S6M4SL  
ESD Protection Diodes Silicon Epitaxial Planar  
DF2S6M4SL  
1. General  
The DF2S6M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device  
interfaces and other applications to protect against static electricity and noise.  
Utilizing snapback characteristics, the DF2S6M4SL provides low dynamic resistance and superior protective  
performance.  
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The  
DF2S6M4SL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a  
small footprint.  
2. Applications  
Mobile Equipment  
Smartphones  
Tablets  
Notebook PCs  
Desktop PCs  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
3. Features  
(1) Suitable for use with a 5 V signal line. (VRWM 5.5 V)  
(2) Protects devices with its high ESD performance.  
(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)  
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.  
(RDYN = 0.3 (typ.))  
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.  
(VC = 9 V@IPP = 2 A (typ.))  
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.  
(0.62 mm × 0.32 mm size (Nickname: SL2))  
4. Packaging  
SL2  
Start of commercial production  
2016-03  
©2016-2022  
2022-08-18  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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