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DF2S8.2CT PDF预览

DF2S8.2CT

更新时间: 2024-11-05 19:43:35
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
6页 141K
描述
DIODE 8.2 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ULTRA SMALL, CST2, 1-1P1A, 2 PIN, Voltage Regulator Diode

DF2S8.2CT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XBCC-N2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-XBCC-N2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.15 W认证状态:Not Qualified
标称参考电压:8.2 V表面贴装:YES
技术:ZENER端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:6.1%工作测试电流:5 mA
Base Number Matches:1

DF2S8.2CT 数据手册

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DF2S8.2CT  
ESD Protection Diodes Silicon Epitaxial Planar  
DF2S8.2CT  
1. Applications  
ESD Protection  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
2. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
CST2  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Rating  
Unit  
Electrostatic discharge voltage (IEC61000-4-2)(Contact)  
Junction temperature  
VESD  
Tj  
±30  
150  
kV  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2013-08-06  
Rev.3.0  
1

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