Datasheet > DF2S5.6S(TPL3)

DF2S5.6S(TPL3)

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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3页	142K
描述
Zener Diode

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数据手册

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DF2S5.6S(TPL3) 数据手册

DF2S5.6S

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF2S5.6S

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

z 2terminal ultra small package suitable for mounting on small space.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

⎯

JEITA

TOSHIBA

1-1K1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.1 mg (typ.)

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5 mA

Min

Typ.

Max

Unit

5.3

―

5.6

―

6.0

Ω

Dynamic impedance

Reverse current

= 5 mA

= 3.5 V

―

μA

Total capacitance

―

= 0 V, f = 1 MHz

Guaranteed Level of ESD Immunity

Marking

6 .

Equivalent Circuit (Top View)

Test Condition

ESD Immunity Level

±30 kV

IEC61000-4-2

(contact discharge)

Criterion: No damage to device elements

2007-11-01

12 3

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