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DF2S5M4CT

更新时间: 2024-11-21 14:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA 电视
页数 文件大小 规格书
9页 382K
描述
Unidirectional TVS Diode (ESD Protection Diode), 3.6 V, SOD-882(CST2)

DF2S5M4CT 技术参数

生命周期:Active包装说明:R-PBCC-N2
Reach Compliance Code:unknown风险等级:5.77
最大击穿电压:5.5 V最小击穿电压:3.7 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
最大非重复峰值反向功率耗散:30 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性:UNIDIRECTIONAL
参考标准:IEC-61000-4-2, 4-5最大重复峰值反向电压:3.6 V
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

DF2S5M4CT 数据手册

 浏览型号DF2S5M4CT的Datasheet PDF文件第2页浏览型号DF2S5M4CT的Datasheet PDF文件第3页浏览型号DF2S5M4CT的Datasheet PDF文件第4页浏览型号DF2S5M4CT的Datasheet PDF文件第5页浏览型号DF2S5M4CT的Datasheet PDF文件第6页浏览型号DF2S5M4CT的Datasheet PDF文件第7页 
DF2S5M4CT  
ESD Protection Diodes Silicon Epitaxial Planar  
DF2S5M4CT  
1. General  
The DF2S5M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device  
interfaces and other applications to protect against static electricity and noise.  
Utilizing snapback characteristics, the DF2S5M4CT provides low dynamic resistance and superior protective  
performance.  
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The  
DF2S5M4CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications that require a small  
footprint.  
2. Applications  
Mobile Equipment  
Smartphones  
Tablets  
Notebook PCs  
Desktop PCs  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
3. Features  
(1) Suitable for use with a 3.3 V signal line. (VRWM 3.6 V)  
(2) Protects devices with its high ESD performance.  
(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)  
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.  
(RDYN = 0.3 (typ.))  
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.  
(VC = 8 V@IPP = 2 A (typ.))  
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.  
(1.0 mm × 0.6 mm size (Nickname: CST2))  
4. Packaging  
CST2  
Start of commercial production  
2016-12  
©2016-2018  
2018-01-25  
Rev.3.0  
1
Toshiba Electronic Devices & Storage Corporation  

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