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DF2S6.8S PDF预览

DF2S6.8S

更新时间： 2024-11-05 02:57:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 120K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

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中文翻译

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DF2S6.8S 技术参数

生命周期：Obsolete零件包装代码：SOD
包装说明：R-PDSO-F2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.67
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：30 Ω
JESD-30 代码：R-PDSO-F2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性：UNIDIRECTIONAL最大功率耗散：0.15 W
认证状态：Not Qualified标称参考电压：6.8 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
最大电压容差：5.88%工作测试电流：5 mA
Base Number Matches：1

DF2S6.8S 数据手册

 浏览型号DF2S6.8S的Datasheet PDF文件第2页浏览型号DF2S6.8S的Datasheet PDF文件第3页 
DF2S6.8S  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF2S6.8S  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
z 2terminal ultra small package suitable for mounting on small space.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
150*  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
⎯
⎯
TOSHIBA  
1-1K1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.0011 g (typ.)  
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5 mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
6.4  
―
―
―
6.8  
―
7.2  
30  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
= 5 mA  
Z
I
V
V
= 5 V  
―
0.5  
―
μA  
pF  
R
R
R
Total capacitance  
C
T
25  
= 0 V, f = 1 MHz  
Guaranteed Level of ESD Immunity  
Marking  
7
Equivalent Circuit (Top View)  
Test Condition  
ESD Immunity Level  
±30 kV  
IEC61000-4-2  
(contact discharge)  
Criterion: No damage to device elements  
2007-11-01  
1
123

中文翻译

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