DF2S6.8S

更新时间： 2024-09-24 02:57:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	120K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

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中文翻译

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技术参数
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DF2S6.8S 技术参数

生命周期：	Obsolete	零件包装代码：	SOD
包装说明：	R-PDSO-F2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.67
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	30 Ω
JESD-30 代码：	R-PDSO-F2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性：	UNIDIRECTIONAL	最大功率耗散：	0.15 W
认证状态：	Not Qualified	标称参考电压：	6.8 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
技术：	ZENER	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
最大电压容差：	5.88%	工作测试电流：	5 mA
Base Number Matches：	1

DF2S6.8S 数据手册

DF2S6.8S

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF2S6.8S

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

z 2terminal ultra small package suitable for mounting on small space.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-1K1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0011 g (typ.)

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5 mA

Min

Typ.

Max

Unit

6.4

―

6.8

―

7.2

Ω

Dynamic impedance

Reverse current

= 5 mA

= 5 V

―

0.5

―

μA

Total capacitance

= 0 V, f = 1 MHz

Guaranteed Level of ESD Immunity

Marking

Equivalent Circuit (Top View)

Test Condition

ESD Immunity Level

±30 kV

IEC61000-4-2

(contact discharge)

Criterion: No damage to device elements

2007-11-01

12 3

中文翻译

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与DF2S6.8S相关器件

型号	品牌	获取价格	描述	数据表
DF2S6.8SC	TOSHIBA	获取价格	DIODE 6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SC2, 1-1R1A, 2 PIN,
DF2S6.8UCT	TOSHIBA	获取价格	DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, CST2, 1-1P1A, 2 PIN, Transient Suppressor
DF2S6.8UCT(TPL3)	TOSHIBA	获取价格	ESD PROTECTION DIODE (STANDARD TYPE, SINGLE)
DF2S6.8UFS	TOSHIBA	获取价格	Not Recommended for New Design
DF2S6M4CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)
DF2S6M4FS	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-923
DF2S6M4SL	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-962(SL2)
DF2S6M5CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-882(CST2)
DF2S6M5SL	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-962(SL2)
DF2S6P1CT	TOSHIBA	获取价格	Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)

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