5秒后页面跳转
DF2S6.8SC PDF预览

DF2S6.8SC

更新时间: 2024-11-20 13:01:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 116K
描述
DIODE 6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SC2, 1-1R1A, 2 PIN, Voltage Regulator Diode

DF2S6.8SC 技术参数

生命周期:Active包装说明:R-XBCC-N2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.7配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-XBCC-N2元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性:UNIDIRECTIONAL最大功率耗散:0.15 W
认证状态:Not Qualified标称参考电压:6.8 V
表面贴装:YES技术:ZENER
端子形式:NO LEAD端子位置:BOTTOM
最大电压容差:5.88%工作测试电流:5 mA
Base Number Matches:1

DF2S6.8SC 数据手册

 浏览型号DF2S6.8SC的Datasheet PDF文件第2页浏览型号DF2S6.8SC的Datasheet PDF文件第3页 
DF2S6.8FS  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF2S6.8FS  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
0.6±0.05  
A
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
z 2terminal ultra small package suitable for mounting on small space.  
0.2  
±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
0.1±0.05  
M
0.07  
A
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
+0.02  
0.48  
150*  
150  
mW  
°C  
-0.03  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~150  
°C  
fSC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-1L1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.0006 g (typ.)  
*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.  
Pad Dimension(Reference)Unit : mm  
0.85  
0.26  
0.21  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
6.4  
6.8  
7.2  
30  
V
Z
Z
Z
Dynamic impedance  
Reverse current  
= 5mA  
Z
I
V
V
= 5V  
0.5  
μA  
R
R
R
Total capacitance  
C
T
25  
pF  
= 0 V, f = 1 MHz  
2007-11-01  
1

与DF2S6.8SC相关器件

型号 品牌 获取价格 描述 数据表
DF2S6.8UCT TOSHIBA

获取价格

DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, CST2, 1-1P1A, 2 PIN, Transient Suppressor
DF2S6.8UCT(TPL3) TOSHIBA

获取价格

ESD PROTECTION DIODE (STANDARD TYPE, SINGLE)
DF2S6.8UFS TOSHIBA

获取价格

Not Recommended for New Design
DF2S6M4CT TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)
DF2S6M4FS TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-923
DF2S6M4SL TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-962(SL2)
DF2S6M5CT TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-882(CST2)
DF2S6M5SL TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOD-962(SL2)
DF2S6P1CT TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-882(CST2)
DF2S6P2CTC TOSHIBA

获取价格

Unidirectional TVS Diode (ESD Protection Diode), 5.5 V, SOD-963(CST2C)