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DF2S6.2CT(TPL3) PDF预览

DF2S6.2CT(TPL3)

更新时间： 2024-11-24 21:20:19
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
3页 134K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,6.2V V(Z),6.5%,SOD-882

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DF2S6.2CT(TPL3) 技术参数

生命周期：ActiveReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.8配置：SINGLE
二极管类型：ZENER DIODE最大动态阻抗：30 Ω
元件数量：1最高工作温度：150 °C
最大功率耗散：0.15 W标称参考电压：6.2 V
子类别：Voltage Reference Diodes表面贴装：YES
最大电压容差：6.5%工作测试电流：5 mA
Base Number Matches：1

DF2S6.2CT(TPL3) 数据手册

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DF2S6.2CT  
TOSHIBA Diodes for Protecting against ESD  
DF2S6.2CT  
Unit in mm  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD)  
*This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z 2 terminal ultra small package suitable for mounting on small space.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P*  
Rating  
Unit  
150*  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,  
pad dimension of 4 mm × 4 mm.  
CST2  
―
―
JEDEC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
JEITA  
1-1P1A  
TOSHIBA  
Weight: 0.7 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
= 5 mA  
= 5 mA  
5.8  
―
―
―
6.2  
―
6.6  
30  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
I
V
V
= 5 V  
―
2.5  
―
μA  
pF  
R
R
R
Terminal capacitance  
C
= 0 V, f = 1 MHz  
32  
T
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30 kV  
Criterion: No damage to device elements  
Marking  
Equivalent Circuit (top view)  
YD  
1
2009-01-19  
123

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