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DF2S5.6S(TPL3,F) PDF预览

DF2S5.6S(TPL3,F)

更新时间： 2024-11-24 20:10:15
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 142K
描述
Zener Diode

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DF2S5.6S(TPL3,F) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.73二极管类型：ZENER DIODE
Base Number Matches：1

DF2S5.6S(TPL3,F) 数据手册

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DF2S5.6S  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF2S5.6S  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
z 2terminal ultra small package suitable for mounting on small space.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
150*  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
⎯
⎯
JEITA  
TOSHIBA  
1-1K1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.1 mg (typ.)  
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5 mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
5.3  
―
―
―
5.6  
―
6.0  
30  
1
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
= 5 mA  
Z
I
V
V
= 3.5 V  
―
μA  
pF  
R
R
R
Total capacitance  
C
T
40  
―
= 0 V, f = 1 MHz  
Guaranteed Level of ESD Immunity  
Marking  
6 .  
Equivalent Circuit (Top View)  
Test Condition  
ESD Immunity Level  
±30 kV  
IEC61000-4-2  
(contact discharge)  
Criterion: No damage to device elements  
1
2007-11-01  
123

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