Datasheet > CZT2000

CZT2000

更新时间： 2024-11-23 06:51:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管达林顿晶体管高压
页数	文件大小	规格书
1页	35K
描述
PNP Silicon Extremely High Voltage Darlington Transistor

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中文翻译

获取价格

数据手册

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CZT2000 数据手册

SMD Type

Transistors

PNP Silicon Extremely High Voltage

Darlington Transistor

CZT2000

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

+0.2

0.90

-0.2

+0.1

3.00

-0.1

Features

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

200

Unit

200

Collector Current

600

Power Dissipation

P^D

Operating and Storage Junction Temperature

Thermal Resistance

T^J,Tstg

ÈJA

-65 to 150

62.5

Electrical Characteristics Ta = 25

Symbol

I^CBO

Testconditons

Min

Max

Unit

VCB=180V

500

100

I^EBO

VBE=10V

B^VCES

IC=1.0mA

200

V^CE(SAT)

V^BE(ON)

IC=20mA, IB=25ìA

IC=80mA, IB=40ìA

IC=160mA, IB=100ìA

VCE=5.0V, IC=160mA

V^CE=5.0V, IC=100ìA

V^CE=5.0V, IC=10mA

V^CE=5.0V, IC=160mA

0.9

1.1

1.2

2.0

3,000

h^FE

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