Datasheet > CZT2000_10

CZT2000_10

更新时间： 2024-09-30 09:46:51

品牌	Logo	应用领域
CENTRAL		晶体晶体管达林顿晶体管高压
页数	文件大小	规格书
2页	528K
描述
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR

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中文翻译

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数据手册

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CZT2000_10 数据手册

CZT2000

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

NPN SILICON

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2000 type is

an NPN Epitaxial Planar Silicon darlington transistor

manufactured in an epoxy molded surface mount

package, designed for applications requiring extremely

high voltages and high gain capability.

DARLINGTON TRANSISTOR

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

200

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

CES

EBO

Continuous Collector Current

Power Dissipation

600

2.0

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

62.5

°C

J, stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

500

UNITS

=180V

=10V

CBO

EBO

100

I =1.0mA

200

CES

CE(SAT)

BE(ON)

I =20mA, I =25µA

0.9

1.1

1.2

2.0

I =80mA, I =40µA

I =160mA, I =100µA

=5.0V, I =160mA

=5.0V, I =100µA

3000

=5.0V, I =10mA

=5.0V, I =160mA

R6 (1-March 2010)

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