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CZT2680 PDF预览

CZT2680

更新时间: 2024-11-19 03:27:51
品牌 Logo 应用领域
CENTRAL 晶体开关晶体管功率双极晶体管光电二极管高压
页数 文件大小 规格书
2页 77K
描述
SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR

CZT2680 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

CZT2680 数据手册

 浏览型号CZT2680的Datasheet PDF文件第2页 
TM  
CZT2680  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
NPN HIGH VOLTAGE  
SILICON SWITCHING  
POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2680  
NPN High Voltage Switching Power Transistor,  
manufactured by the epitaxial planar process,  
combines both power and high speed switching  
characteristics in a SOT-223 Surface Mount  
Package. Typical applications include drivers  
and general high voltage switching applications.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
250  
200  
6.0  
1.5  
2.0  
2.0  
V
V
CBO  
CEO  
EBO  
V
I
A
C
Peak Collector Current  
Power Dissipation  
I
A
CM  
P
W
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
62.5  
°C  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=200V  
MIN  
TYP  
MAX  
UNITS  
nA  
V
I
V
100  
CBO  
CB  
I =100µA  
BV  
BV  
BV  
250  
200  
6.0  
435  
275  
9.0  
CBO  
C
I =20mA  
V
CEO  
C
I =100µA  
V
EBO  
E
V
V
V
V
V
I =100mA, I =10mA  
45  
150  
200  
500  
1.10  
1.20  
mV  
mV  
mV  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
95  
C
B
I =1.0A, I =150mA  
135  
0.83  
0.95  
C
B
I =500mA, I =50mA  
C
B
I =1.0A, I =150mA  
V
C
B
R2 (17-June 2004)  

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