Datasheet > CZT2680_10

CZT2680_10

更新时间： 2024-11-19 09:46:51

品牌	Logo	应用领域
CENTRAL		晶体开关晶体管高压
页数	文件大小	规格书
2页	597K
描述
SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR

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CZT2680_10 数据手册

CZT2680

SURFACE MOUNT

HIGH VOLTAGE

NPN SILICON

SWITCHING POWER TRANSISTOR

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2680

NPN High Voltage Switching Power Transistor,

manufactured by the epitaxial planar process,

combines both power and high speed switching

characteristics in a SOT-223 Surface Mount Package.

Typical applications include drivers and general high

voltage switching applications.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

250

200

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

1.5

2.0

Power Dissipation

2.0

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

62.5

°C

°C/W

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

=200V

MIN

TYP

MAX

UNITS

100

CBO

I =100µA

250

200

6.0

435

275

9.0

CBO

CEO

I =20mA

I =100µA

EBO

I =100mA, I =10mA

150

200

500

1.10

1.20

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =1.0A, I =150mA

135

0.83

0.95

105

I =500mA, I =50mA

I =1.0A, I =150mA

=5.0V, I =20mA

=5.0V, I =500mA

=5.0V, I =1.0A

=20V, I =100mA, f=1.0MHz

MHz

=10V, I =0, f=1.0MHz

I =500mA, V =20V, I = I =50mA

0.3

1.0

µs

off

CC B1 B2

I =500mA, V =20V, I = I =50mA

µs

CC B1 B2

R3 (1-March 2010)

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