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CZT250KTR13PBFREE PDF预览

CZT250KTR13PBFREE

更新时间: 2024-11-20 06:10:27
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 528K
描述
Transistor,

CZT250KTR13PBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):1 A配置:DARLINGTON
最小直流电流增益 (hFE):250000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):125 MHz

CZT250KTR13PBFREE 数据手册

 浏览型号CZT250KTR13PBFREE的Datasheet PDF文件第2页 
CZT250K  
SURFACE MOUNT  
www.centralsemi.com  
EXTREMELY HIGH h  
NPN SILICON  
DARLINGTON TRANSISTOR  
FE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT250K type is  
an NPN silicon Darlington transistor manufactured by  
the epitaxial planar process, epoxy molded in a surface  
mount package, designed for applications requiring  
extremely high gain.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
50  
25  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
10  
V
Continuous Collector Current  
Power Dissipation  
I
1.0  
A
C
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=30V  
MIN  
MAX  
UNITS  
I
V
100  
nA  
V
CBO  
CB  
I =10µA  
BV  
BV  
BV  
50  
25  
10  
CBO  
CEO  
C
I =10mA  
V
C
I =100µA  
V
EBO  
E
V
V
I =100mA, I =0.1mA  
1.5  
2.0  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =100mA  
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=5.0V, I =10mA  
250,000  
250,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
T
C
R3 (1-March 2010)  

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