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CZT2000LEADFREE PDF预览

CZT2000LEADFREE

更新时间: 2024-01-21 19:35:02
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 528K
描述
Power Bipolar Transistor, 0.6A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZT2000LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.11外壳连接:COLLECTOR
最大集电极电流 (IC):0.6 A配置:DARLINGTON
最小直流电流增益 (hFE):3000JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICONBase Number Matches:1

CZT2000LEADFREE 数据手册

 浏览型号CZT2000LEADFREE的Datasheet PDF文件第2页 
CZT2000  
SURFACE MOUNT  
EXTREMELY HIGH VOLTAGE  
NPN SILICON  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2000 type is  
an NPN Epitaxial Planar Silicon darlington transistor  
manufactured in an epoxy molded surface mount  
package, designed for applications requiring extremely  
high voltages and high gain capability.  
DARLINGTON TRANSISTOR  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
200  
200  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
CES  
V
10  
V
EBO  
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
500  
UNITS  
I
I
V
V
=180V  
=10V  
nA  
nA  
V
CBO  
EBO  
CB  
100  
BE  
BV  
I =1.0mA  
200  
CES  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
V
V
V
V
I =20mA, I =25µA  
0.9  
1.1  
1.2  
2.0  
V
C
B
I =80mA, I =40µA  
V
C
B
I =160mA, I =100µA  
V
C
B
V
=5.0V, I =160mA  
V
CE  
CE  
CE  
CE  
C
h
h
h
V
V
V
=5.0V, I =100µA  
3000  
3000  
3000  
C
=5.0V, I =10mA  
FE  
C
=5.0V, I =160mA  
FE  
C
R6 (1-March 2010)  

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