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CZT2222ALEADFREE PDF预览

CZT2222ALEADFREE

更新时间: 2024-11-23 13:07:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 97K
描述
Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZT2222ALEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.22外壳连接:COLLECTOR
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

CZT2222ALEADFREE 数据手册

 浏览型号CZT2222ALEADFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CZT2222A  
S e m ic o n d u c t o r Co r p .  
NPN SILICON TRANSISTOR  
DESCRIPTION  
The  
CENTRAL  
SEMICONDUCTOR  
CZT2222A type is an NPN silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for general purpose amplifier and  
switching applications.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
75  
40  
6.0  
600  
2.0  
V
V
V
mA  
W
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
10  
10  
10  
UNITS  
nA  
µA  
nA  
nA  
V
I
I
I
I
V
V
V
V
=60V  
=60V, T =125 C  
=3.0V  
=60V, V =3.0V  
CBO  
CBO  
EBO  
CEV  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
CB  
CB  
EB  
CE  
o
A
EB  
BV  
BV  
BV  
V
V
V
V
h
I =10µA  
75  
40  
6.0  
C
I =10mA  
V
V
V
V
V
V
C
I =10µA  
E
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
C
B
B
B
B
I =500mA, I =50mA  
C
I =150mA, I =15mA  
0.6  
C
I =500mA, I =50mA  
C
V
=10V, I =0.1mA  
35  
50  
75  
CE  
CE  
CE  
C
h
h
V
V
=10V, I =1.0mA  
C
FE  
=10V, I =10mA  
FE  
C
300  

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