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CZT2907ATR PDF预览

CZT2907ATR

更新时间: 2024-02-15 00:41:33
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 97K
描述
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

CZT2907ATR 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.11Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.6 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsVCEsat-Max:1.6 V
Base Number Matches:1

CZT2907ATR 数据手册

 浏览型号CZT2907ATR的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CZT2907A  
S e m ic o n d u c t o r Co r p .  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CZT2907A type is an PNP silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for general purpose amplifier and  
switching applications.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
60  
60  
5.0  
600  
2.0  
V
V
V
mA  
W
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
10  
UNITS  
I
I
I
V
V
V
=50V  
=50V, T =125 C  
=30V, V =0.5V  
BE  
nA  
µA  
nA  
V
V
V
V
V
V
V
CBO  
CBO  
CEV  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
CB  
CB  
CE  
o
A
50  
BV  
BV  
BV  
V
V
V
V
h
I =10µA  
60  
60  
5.0  
C
I =10mA  
C
I =10µA  
E
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
C
B
B
B
B
I =500mA, I =50mA  
C
I =150mA, I =15mA  
C
I =500mA, I =50mA  
C
V
=10V, I =0.1mA  
75  
100  
CE  
CE  
C
h
V
=10V, I =1.0mA  
C
FE  
302  

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