是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.71 |
JESD-609代码: | e0 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | Tin/Lead (Sn/Pb) | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CZT127TR | CENTRAL |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CZT127TR13 | CENTRAL |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CZT127TR13LEADFREE | CENTRAL |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CZT127TR13PBFREE | CENTRAL |
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Transistor, | |
CZT127TRLEADFREE | CENTRAL |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CZT127TRPBFREE | CENTRAL |
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暂无描述 | |
CZT2000 | CENTRAL |
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NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR | |
CZT2000 | KEXIN |
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PNP Silicon Extremely High Voltage Darlington Transistor | |
CZT2000 | TYSEMI |
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Absolute Maximum Ratings Ta = 25 | |
CZT2000_10 | CENTRAL |
获取价格 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR |