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CZT127TIN/LEAD PDF预览

CZT127TIN/LEAD

更新时间: 2024-11-23 13:07:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管达林顿晶体管开关光电二极管
页数 文件大小 规格书
2页 597K
描述
Power Bipolar Transistor,

CZT127TIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.71
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CZT127TIN/LEAD 数据手册

 浏览型号CZT127TIN/LEAD的Datasheet PDF文件第2页 
CZT122 NPN  
CZT127 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT122, CZT127  
types are Complementary Silicon Power Darlington  
Transistors manufactured in a surface mount package  
designed for low speed switching and amplifier  
applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
100  
100  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
5.0  
A
C
I
8.0  
A
CM  
Continuous Base Current  
Power Dissipation  
I
120  
mA  
W
B
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
500  
200  
2.0  
UNITS  
µA  
µA  
mA  
V
I
I
I
V
V
V
=50V  
=100V  
=5.0V  
CEO  
CBO  
EBO  
CE  
CB  
EB  
BV  
I =30mA  
100  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
V
V
V
I =3.0A, I =12mA  
2.0  
4.0  
2.5  
V
C
B
I =5.0A, I =20mA  
V
C
B
V
=3.0V, I =3.0A  
V
CE  
CE  
CE  
CE  
CB  
CB  
C
h
h
V
V
V
V
V
=3.0V, I =500mA  
1000  
1000  
4.0  
C
=3.0V, I =3.0A  
FE  
C
f
=4.0V, I =3.0A, f=1.0MHz  
MHz  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz (CZT122)  
200  
300  
ob  
ob  
E
=10V, I =0, f=1.0MHz (CZT127)  
pF  
E
R4 (1-March 2010)  

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