Datasheet > CZT127

CZT127

更新时间： 2024-11-23 20:24:43

品牌	Logo	应用领域
鲁光 - LGE		开关光电二极管晶体管
页数	文件大小	规格书
2页	683K
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中文翻译

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技术参数
数据手册

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CZT127 技术参数

极性：	PNP	Pc（W）：	1
Collector-emitter breakdown voltage：	100	IC(A)：	5
DC current gain - Min：	1000	DC current gain - Max：	/
Transition frequency：	4	Package：	SOT-223
class：	Transistors

CZT127 数据手册

CZT127

SOT-223 Transistor(PNP)

1. BASE

SOT-223

2. COLLECTOR

3. EMITTER

Features

Complementary to CZT122

Silicon Power Darlington Transistors

Low speed switching and amplifier applications

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-100

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-5

P_C

℃

T_j

150

-65-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

I_CBO

Test

conditions

MIN

-100

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

Base cut-off current

I_C=-1m A,I_E=0

I_C=-30mA,I_B=0

V_CB=-100V,I_E=0

V_CE=-50V,I_B=0

-200

-500

-2

I_CEO

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

h_FE(1)

V_CE=-3V,I_C=-0.5A

V_CE=-3V,I_C=-3A

I_C=-3A,I_B=-12mA

I_C=-5A,I_B=-20mA

V_CE=-3V,I_C=-3A

V_CE=-4V,I_C=-3A,f=1MHz

V_CB=-10V, I_E=0, f=1.0MHz

1000

DC current gain

h_FE(2)

V_CE(sat)1

V_CE(sat)2

V_BE(on)

f_T

-2

-4

Collector-emitter saturation voltage

Base-emitter voltage

-2.5

Transition frequency

MHz

Collector output capacitance

Cob

200

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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