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CY7C1346F-100AC PDF预览

CY7C1346F-100AC

更新时间: 2024-11-21 03:00:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
16页 322K
描述
2-Mbit (64K x 36) Pipelined Sync SRAM

CY7C1346F-100AC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数:100Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.65Is Samacsys:N
最长访问时间:4.5 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:2359296 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.04 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.205 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

CY7C1346F-100AC 数据手册

 浏览型号CY7C1346F-100AC的Datasheet PDF文件第2页浏览型号CY7C1346F-100AC的Datasheet PDF文件第3页浏览型号CY7C1346F-100AC的Datasheet PDF文件第4页浏览型号CY7C1346F-100AC的Datasheet PDF文件第5页浏览型号CY7C1346F-100AC的Datasheet PDF文件第6页浏览型号CY7C1346F-100AC的Datasheet PDF文件第7页 
CY7C1346F  
2-Mbit (64K x 36) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 64K × 36 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
— 4.5 ns (for 100-MHz device)  
The CY7C1346F SRAM integrates 65,536 x 36 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
ADV  
(
, and  
), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:D]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
Addresses and chip enables are registered at rising edge of  
• Provide high-performance 3-1-1-1 access rate  
clock when either Address Strobe Processor (  
) or  
ADSP  
• User-selectable burst counter supporting Intel  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
Pentiuminterleaved or linear burst sequences  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
ADV  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1346F operates from a +3.3V core power supply  
while all outputs also operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQD,DQ  
BYTE  
WRITE REGISTER  
D
DQ  
BYTE  
WRITE DRIVER  
D ,DQPD  
BW  
D
DQ  
BYTE  
WRITE DRIVER  
C ,DQPC  
DQ  
BYTE  
WRITE REGISTER  
C,DQPC  
DQs  
DQP  
DQP  
BW  
C
OUTPUT  
BUFFERS  
A
OUTPUT  
REGISTERS  
MEMORY  
ARRAY  
SENSE  
AMPS  
B
C
DQB,DQP  
B
E
DQB,DQP  
B
DQP  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BW  
BW  
B
A
DQP  
D
DQA,DQP  
A
DQ  
A ,DQPA  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
1
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05384 Rev. *B  
Revised December 3, 2004  

CY7C1346F-100AC 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1346F-166AC CYPRESS

完全替代

2-Mbit (64K x 36) Pipelined Sync SRAM
CY7C1346F-133ACT CYPRESS

功能相似

Cache SRAM, 64KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1346H-166AXC CYPRESS

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2-Mbit (64K x 36) Pipelined Sync SRAM

与CY7C1346F-100AC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1346F-100ACT CYPRESS

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CY7C1346F-166AC CYPRESS

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2-Mbit (64K x 36) Pipelined Sync SRAM
CY7C1346F-166ACT CYPRESS

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CY7C1346H-133AXI CYPRESS

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CY7C1346H-166AXC CYPRESS

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2-Mbit (64K x 36) Pipelined Sync SRAM
CY7C1346H-166AXI CYPRESS

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