Datasheet > 存储 > SRAM> CY7C1347B-100AI

CY7C1347B-100AI

更新时间： 2024-11-21 03:01:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
17页	732K
描述
128K x 36 Synchronous-Pipelined Cache RAM

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CY7C1347B-100AI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数：	100	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.82	最长访问时间：	5.5 ns
最大时钟频率 (fCLK)：	100 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	4718592 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	36
功能数量：	1	端子数量：	100
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装等效代码：	QFP100,.63X.87
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	2.5/3.3,3.3 V	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大待机电流：	0.01 A
最小待机电流：	3.14 V	子类别：	SRAMs
最大压摆率：	0.325 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

CY7C1347B-100AI 数据手册

1CY7C1347

CY7C1347B

128K x 36 Synchronous-Pipelined Cache RAM

The CY7C1347B I/O pins can operate at either the 2.5V or the

3.3V level, the I/O pins are 3.3V tolerant when V_DDQ= 2.5V.

Features

• Supports 100-MHz bus for Pentium and PowerPC™

operations with zero wait states

• Fully registered inputs and outputs for pipelined oper-

ation

• 128K by 36 common I/O architecture

• 3.3V core power supply

• 2.5V/3.3V I/O operation

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. All data outputs pass through

output registers controlled by the rising edge of the clock. Max-

imum access delay from the clock rise is 3.5 ns (166-MHz

device).

The CY7C1347B supports either the interleaved burst se-

quence used by the Intel Pentium processor or a linear burst

sequence used by processors such as the PowerPC. The burst

sequence is selected through the MODE pin. Accesses can be

initiated by asserting either the Processor Address Strobe

(ADSP) or the Controller Address Strobe (ADSC) at clock rise.

Address advancement through the burst sequence is con-

trolled by the ADV input. A 2-bit on-chip wraparound burst

counter captures the first address in a burst sequence and

automatically increments the address for the rest of the burst

access.

• Fast clock-to-output times

— 3.5 ns (for 166-MHz device)

— 4.0 ns (for 133-MHz device)

— 5.5 ns (for 100-MHz device)

• User-selectable burst counter supporting Intel Pen-

tium interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• JEDEC-standard 100 TQFP pinout

• “ZZ” Sleep Mode option and Stop Clock option

• Available in Industrial and Commercial Temperature

ranges

Byte write operations are qualified with the four Byte Write

Select (BW_[3:0]) inputs. A Global Write Enable (GW) overrides

all byte write inputs and writes data to all four bytes. All writes

are conducted with on-chip synchronous self-timed write cir-

cuitry.

Three synchronous Chip Selects (CE₁, CE₂, CE₃) and an

asynchronous Output Enable (OE) provide for easy bank se-

lection and output three-state control. In order to provide prop-

er data during depth expansion, OE is masked during the first

clock of a read cycle when emerging from a deselected state.

Functional Description

The CY7C1347B is a 3.3V, 128K by 36 synchronous-pipelined

cache SRAM designed to support zero-wait-state secondary

cache with minimal glue logic.

MODE

Logic Block Diagram

)

[1;0]

CLK

ADV

ADSC

BURST

COUNTER

CLR

ADSP

ADDRESS

128KX36

MEMORY

ARRAY

[16:0]

DQ[31:24], DP[3]

BYTEWRITE

REGISTERS

BWE

DQ[23:16], DP[2]

BYTEWRITE

REGISTERS

DQ[15:8], DP[1]

BYTEWRITE

REGISTERS

DQ[7:0], DP[0]

BYTEWRITE

REGISTERS

ENABLE CE

OUTPUT

INPUT

ENABLE DELAY

REGISTERS

CLK

SLEEP

CONTROL

[31:0]

[3:0]

Pentium and Intel are registered trademarks of Intel Corporation.

PowerPC is a trademark of IBM Corporation.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

March 11, 2001

12 3 4 5 6 7...17

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与CY7C1347B-100AI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1347B-100AIT	CYPRESS	获取价格	Cache SRAM, 128KX36, 5.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1347B-100BGC	CYPRESS	获取价格	128K x 36 Synchronous-Pipelined Cache RAM
CY7C1347B-100BGC	ROCHESTER	获取价格	128KX36 CACHE SRAM, 5.5ns, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1347B-100BGCT	CYPRESS	获取价格	Cache SRAM, 128KX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1347B-100BGI	CYPRESS	获取价格	128K x 36 Synchronous-Pipelined Cache RAM
CY7C1347B-100BGIT	CYPRESS	获取价格	Cache SRAM, 128KX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1347B-133AC	CYPRESS	获取价格	128K x 36 Synchronous-Pipelined Cache RAM
CY7C1347B-133AC	ROCHESTER	获取价格	128KX36 CACHE SRAM, 4ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1347B-133ACT	CYPRESS	获取价格	Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1347B-133ACT	ROCHESTER	获取价格	128KX36 CACHE SRAM, 4ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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