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CY7C1346F-133AC PDF预览

CY7C1346F-133AC

更新时间: 2024-11-21 03:00:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
16页 322K
描述
2-Mbit (64K x 36) Pipelined Sync SRAM

CY7C1346F-133AC 数据手册

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CY7C1346F  
2-Mbit (64K x 36) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 64K × 36 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
— 4.5 ns (for 100-MHz device)  
The CY7C1346F SRAM integrates 65,536 x 36 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
ADV  
(
, and  
), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:D]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
Addresses and chip enables are registered at rising edge of  
• Provide high-performance 3-1-1-1 access rate  
clock when either Address Strobe Processor (  
) or  
ADSP  
• User-selectable burst counter supporting Intel  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
Pentiuminterleaved or linear burst sequences  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
ADV  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1346F operates from a +3.3V core power supply  
while all outputs also operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQD,DQ  
BYTE  
WRITE REGISTER  
D
DQ  
BYTE  
WRITE DRIVER  
D ,DQPD  
BW  
D
DQ  
BYTE  
WRITE DRIVER  
C ,DQPC  
DQ  
BYTE  
WRITE REGISTER  
C,DQPC  
DQs  
DQP  
DQP  
BW  
C
OUTPUT  
BUFFERS  
A
OUTPUT  
REGISTERS  
MEMORY  
ARRAY  
SENSE  
AMPS  
B
C
DQB,DQP  
B
E
DQB,DQP  
B
DQP  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BW  
BW  
B
A
DQP  
D
DQA,DQP  
A
DQ  
A ,DQPA  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
1
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05384 Rev. *B  
Revised December 3, 2004  

CY7C1346F-133AC 替代型号

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