CY7C1346H
PRELIMINARY
2-Mbit (64K x 36) Pipelined Sync SRAM
Features
Functional Description[1]
• Registered inputs and outputs for pipelined operation
• 64K × 36 common I/O architecture
• 3.3V core power supply
The CY7C1346H SRAM integrates 65,536 x 36 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
• 3.3V I/O operation
• Fast clock-to-output times
(
), depth-expansion Chip Enables (CE and
), Burst
CE3
CE1
2
— 3.5 ns (for 166-MHz device)
Control inputs (
,
,
and
ADSC ADSP
), Write Enables
). Asynchronous
GW
ADV
), and Global Write (
BWE
(
, and
BW[A:D]
— 4.0 ns (for 133-MHz device)
inputs include the Output Enable ( ) and the ZZ pin.
OE
• Provide high-performance 3-1-1-1 access rate
Addresses and chip enables are registered at rising edge of
• User-selectable burst counter supporting Intel®
clock when either Address Strobe Processor (
) or
ADSP
Pentium® interleaved or linear burst sequences
Address Strobe Controller (
burst addresses can be internally generated as controlled by
the Advance pin ( ).
) are active. Subsequent
ADSC
• Separate processor and controller address strobes
• Synchronous self-timed writes
ADV
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
• Asynchronous output enable
• Offered in Lead-Free JEDEC-standard 100-pin TQFP
package
controlled by the Byte Write control inputs.
when active
GW
• “ZZ” Sleep Mode Option
causes all bytes to be written.
LOW
The CY7C1346H operates from a +3.3V core power supply
while all outputs also operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
Logic Block Diagram
A0, A1, A
ADDRESS
REGISTER
2
A[1:0]
MODE
Q1
ADV
CLK
BURST
COUNTER
AND
CLR
Q0
LOGIC
ADSC
ADSP
DQD,DQ
BYTE
WRITE REGISTER
D
DQ
BYTE
WRITE DRIVER
D ,DQPD
BW
D
DQ
BYTE
WRITE DRIVER
C ,DQPC
DQ
BYTE
WRITE REGISTER
C,DQPC
DQs
DQP
DQP
BW
C
OUTPUT
BUFFERS
A
OUTPUT
REGISTERS
MEMORY
ARRAY
SENSE
AMPS
B
C
DQB,DQP
B
E
DQB,DQP
B
DQP
BYTE
WRITE DRIVER
BYTE
WRITE REGISTER
BW
BW
B
A
DQP
D
DQA,DQP
A
DQ
A ,DQPA
BYTE
WRITE DRIVER
BYTE
WRITE REGISTER
BWE
INPUT
REGISTERS
GW
ENABLE
REGISTER
PIPELINED
ENABLE
CE
CE
CE
1
2
3
OE
SLEEP
CONTROL
ZZ
1
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05672 Rev. **
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised April 12, 2005