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CY7C1346H-133AXC PDF预览

CY7C1346H-133AXC

更新时间: 2024-11-21 20:06:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
16页 264K
描述
Cache SRAM, 64KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM, LEAD FREE, PLASTIC, TQFP-100

CY7C1346H-133AXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
最长访问时间:4 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e4
长度:20 mm内存密度:2359296 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:14 mmBase Number Matches:1

CY7C1346H-133AXC 数据手册

 浏览型号CY7C1346H-133AXC的Datasheet PDF文件第2页浏览型号CY7C1346H-133AXC的Datasheet PDF文件第3页浏览型号CY7C1346H-133AXC的Datasheet PDF文件第4页浏览型号CY7C1346H-133AXC的Datasheet PDF文件第5页浏览型号CY7C1346H-133AXC的Datasheet PDF文件第6页浏览型号CY7C1346H-133AXC的Datasheet PDF文件第7页 
CY7C1346H  
PRELIMINARY  
2-Mbit (64K x 36) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 64K × 36 common I/O architecture  
• 3.3V core power supply  
The CY7C1346H SRAM integrates 65,536 x 36 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
• 3.3V I/O operation  
• Fast clock-to-output times  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
— 3.5 ns (for 166-MHz device)  
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
). Asynchronous  
GW  
ADV  
), and Global Write (  
BWE  
(
, and  
BW[A:D]  
— 4.0 ns (for 133-MHz device)  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
• Provide high-performance 3-1-1-1 access rate  
Addresses and chip enables are registered at rising edge of  
• User-selectable burst counter supporting Intel®  
clock when either Address Strobe Processor (  
) or  
ADSP  
Pentium® interleaved or linear burst sequences  
Address Strobe Controller (  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
) are active. Subsequent  
ADSC  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
ADV  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
• Asynchronous output enable  
• Offered in Lead-Free JEDEC-standard 100-pin TQFP  
package  
controlled by the Byte Write control inputs.  
when active  
GW  
• “ZZ” Sleep Mode Option  
causes all bytes to be written.  
LOW  
The CY7C1346H operates from a +3.3V core power supply  
while all outputs also operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQD,DQ  
BYTE  
WRITE REGISTER  
D
DQ  
BYTE  
WRITE DRIVER  
D ,DQPD  
BW  
D
DQ  
BYTE  
WRITE DRIVER  
C ,DQPC  
DQ  
BYTE  
WRITE REGISTER  
C,DQPC  
DQs  
DQP  
DQP  
BW  
C
OUTPUT  
BUFFERS  
A
OUTPUT  
REGISTERS  
MEMORY  
ARRAY  
SENSE  
AMPS  
B
C
DQB,DQP  
B
E
DQB,DQP  
B
DQP  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BW  
BW  
B
A
DQP  
D
DQA,DQP  
A
DQ  
A ,DQPA  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
1
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05672 Rev. **  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised April 12, 2005  

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