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CY7C1319KV18_13 PDF预览

CY7C1319KV18_13

更新时间: 2024-11-24 12:27:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器双倍数据速率
页数 文件大小 规格书
31页 503K
描述
18-Mbit DDR II SRAM Four-Word Burst Architecture

CY7C1319KV18_13 数据手册

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CY7C1319KV18, CY7C1321KV18  
18-Mbit DDR II SRAM  
Four-Word Burst Architecture  
18-Mbit DDR II SRAM Four-Word Burst Architecture  
Features  
Configurations  
18-Mbit density (1 M × 18, 512 K × 36)  
333-MHz clock for high bandwidth  
CY7C1319KV18 – 1 M × 18  
CY7C1321KV18 – 512 K × 36  
Four-word burst for reducing address bus frequency  
Functional Description  
Double data rate (DDR) interfaces (data transferred at  
666 MHz) at 333 MHz  
CY7C1319KV18 and CY7C1321KV18 are 1.8 V Synchronous  
Pipelined SRAMs equipped with DDR II architecture. The DDR  
II consists of an SRAM core with advanced synchronous  
peripheral circuitry and a two-bit burst counter. Addresses for  
read and write are latched on alternate rising edges of the input  
(K) clock. Write data is registered on the rising edges of both K  
and K. Read data is driven on the rising edges of C and C if  
provided, or on the rising edge of K and K if C/C are not provided.  
For CY7C1319KV18 and CY7C1321KV18, the burst counter  
takes in the least two significant bits of the external address and  
bursts four 18-bit words in the case of CY7C1319KV18, and four  
36-bit words in the case of CY7C1321KV18, sequentially into or  
out of the device.  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize clock  
skew and flight time mismatches  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Synchronous internally self-timed writes  
DDR II operates with 1.5 cycle read latency when DOFF is  
asserted HIGH  
Asynchronous inputs include an output impedance matching  
input (ZQ). Synchronous data outputs (Q, sharing the same  
physical pins as the data inputs, D) are tightly matched to the two  
output echo clocks CQ/CQ, eliminating the need to capture data  
separately from each individual DDR SRAM in the system  
design. Output data clocks (C/C) enable maximum system  
clocking and data synchronization flexibility.  
Operates similar to DDR I device with one cycle read latency  
when DOFF is asserted LOW  
1.8 V core power supply with HSTL inputs and outputs  
Variable drive HSTL output buffers  
Expanded HSTL output voltage (1.4 V–VDD  
)
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Supports both 1.5 V and 1.8 V I/O supply  
Available in 165-ball FBGA package (13 × 15 ×1.4 mm)  
Offered in both Pb-free and non Pb-free packages  
JTAG 1149.1 compatible test access port  
Phase locked loop (PLL) for accurate data placement  
Selection Guide  
Description  
Maximum operating frequency  
333 MHz  
300  
250 MHz Unit  
250  
320  
370  
MHz  
mA  
Maximum operating current  
× 18  
× 36  
370  
440  
Cypress Semiconductor Corporation  
Document Number: 001-58906 Rev. *G  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 23, 2013  

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