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CY7C1305AV18-100BZC PDF预览

CY7C1305AV18-100BZC

更新时间: 2024-09-16 05:09:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储静态存储器
页数 文件大小 规格书
20页 483K
描述
18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture

CY7C1305AV18-100BZC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
Base Number Matches:1

CY7C1305AV18-100BZC 数据手册

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CY7C1305AV18  
CY7C1307AV18  
PRELIMINARY  
18-MbBurstof4PipelinedSRAMwithQDRArchitecture  
Features  
Functional Description  
• Separate independent Read and Write data ports  
— Supports concurrent transactions  
• 167 MHz Clock for high bandwidth  
— 2.5 ns Clock-to-Valid access time  
• 4-Word Burst for reducing the address bus frequency  
The CY7C1305AV18/CY7C1307AV18 are 1.8V Synchronous  
Pipelined SRAMs equipped with QDR™ architecture. QDR  
architecture consists of two separate ports to access the  
memory array. The Read port has dedicated Data Outputs to  
support Read operations and the Write Port has dedicated  
Data Inputs to support Write operations. QDR architecture has  
separate data inputs and data outputs to completely eliminate  
the need to “turn-around” the data bus required with common  
I/O devices. Access to each port is accomplished through a  
common address bus. Addresses for Read and Write  
addresses are latched on alternate rising edges of the input  
(K) clock. Accesses to the device’s Read and Write ports are  
completely independent of one another. In order to maximize  
data throughput, both Read and Write ports are equipped with  
Double Data Rate (DDR) interfaces. Each address location is  
associated with four 18-bit words (CY7C1305AV18) and four  
36-bit words (CY7C1307AV18) that burst sequentially into or  
out of the device. Since data can be transferred into and out  
of the device on every rising edge of both input clocks (K/K and  
C/C) memory bandwidth is maximized while simplifying  
system design by eliminating bus “turn-arounds.”  
• DoubleDataRate(DDR)interfacesonbothRead&Write  
Ports (data transferred at 333 MHz) @167 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two output clocks (C and C) accounts for clock skew  
and flight time mismatching  
• Single multiplexed address input bus latches address  
inputs for both Read and Write ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• 1.8V core power supply with HSTL Inputs and Outputs  
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball  
Depth expansion is accomplished with Port Selects for each  
(11x15 matrix)  
port. Port selects allow each port to operate independently.  
• Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–1.9V)  
• JTAG Interface  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
Configurations  
CY7C1305AV18 – 1M x 18  
CY7C1307AV18 – 512K x 36  
Logic Block Diagram (CY7C1305AV18)  
D[17:0]  
18  
Write Write Write Write  
Reg Reg Reg  
Reg  
Address  
Register  
A(17:0)  
Address  
Register  
A(17:0)  
18  
18  
K
CLK  
K
RPS  
Control  
Logic  
Gen.  
C
C
Read Data Reg.  
72  
36  
Vref  
WPS  
BWS[0:1]  
Reg.  
Reg.  
Reg.  
18  
Control  
Logic  
36  
Q[17:0]  
18  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05495 Rev. *A  
Revised June 1, 2004  

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