Datasheet > 存储 > SRAM> CY7C1305BV25-167BZXI

CY7C1305BV25-167BZXI

更新时间： 2024-11-06 05:09:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
21页	914K
描述
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture

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CY7C1305BV25-167BZXI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.8
最长访问时间：	2.5 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	167 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	QDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5/1.8,2.5 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.2 A	最小待机电流：	2.4 V
子类别：	SRAMs	最大压摆率：	0.4 mA
最大供电电压 (Vsup)：	2.6 V	最小供电电压 (Vsup)：	2.4 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	13 mm
Base Number Matches：	1

CY7C1305BV25-167BZXI 数据手册

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CY7C1305BV25

CY7C1307BV25

18-Mbit Burst of 4 Pipelined SRAM with

QDR™ Architecture

Features

Functional Description

• Separate independent Read and Write data ports

• Supports concurrent transactions

The CY7C1305BV25/CY7C1307BV25 are 2.5V Synchronous

Pipelined SRAMs equipped with QDR architecture. QDR

architecture consists of two separate ports to access the

memory array. The Read port has dedicated Data Outputs to

support Read operations and the Write Port has dedicated

Data Inputs to support Write operations. QDR architecture has

separate data inputs and data outputs to completely eliminate

the need to “turn-around” the data bus required with common

I/O devices. Access to each port is accomplished through a

common address bus. Addresses for Read and Write

addresses are latched on alternate rising edges of the input

(K) clock. Accesses to the device’s Read and Write ports are

completely independent of one another. In order to maximize

data throughput, both Read and Write ports are equipped with

Double Data Rate (DDR) interfaces. Each address location is

associated with four 18-bit words (CY7C1305BV25) and four

36-bit words (CY7C1307BV25) that burst sequentially into or

out of the device. Since data can be transferred into and out

of the device on every rising edge of both input clocks (K/K and

C/C) memory bandwidth is maximized while simplifying

system design by eliminating bus “turn-arounds.”

• 167-MHz clock for high bandwidth

• 2.5 ns Clock-to-Valid access time

• 4-Word Burst for reducing the address bus frequency

• Double Data Rate (DDR) interfaces on both Read and

Write Ports (data transferred at 333 MHz) @167 MHz

• Two input clocks (K and K) for precise DDR timing

• SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches.

• Single multiplexed address input bus latches address

inputs for both Read and Write ports

• Separate Port Selects for depth expansion

• Synchronous internally self-timed writes

• 2.5V core power supply with HSTL Inputs and Outputs

• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

• Variable drive HSTL output buffers

Depth expansion is accomplished with Port Selects for each

port. Port selects allow each port to operate independently.

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

• Expanded HSTL output voltage (1.4V–1.9V)

• JTAG interface

Configurations

• CY7C1305BV25 – 1M x 18

• CY7C1307BV25 – 512K x 36

Cypress Semiconductor Corporation

Document #: 38-05630 Rev. *A

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 3, 2006

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与CY7C1305BV25-167BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1305V25	ETC	获取价格	Memory
CY7C1305V25-100BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, FBGA-165
CY7C1305V25-133BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1305V25-167BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1305V25-200BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 2.3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, FBGA-165
CY7C1306AV18	CYPRESS	获取价格	18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Arc
CY7C1306AV18-100BZC	CYPRESS	获取价格	18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Arc
CY7C1306AV18-133BZC	CYPRESS	获取价格	18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Arc
CY7C1306AV18-167BZC	CYPRESS	获取价格	18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Arc
CY7C1306AV25	CYPRESS	获取价格	18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Arc

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