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CY7C1303CV25 PDF预览

CY7C1303CV25

更新时间: 2024-10-31 06:51:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
21页 522K
描述
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture

CY7C1303CV25 数据手册

 浏览型号CY7C1303CV25的Datasheet PDF文件第2页浏览型号CY7C1303CV25的Datasheet PDF文件第3页浏览型号CY7C1303CV25的Datasheet PDF文件第4页浏览型号CY7C1303CV25的Datasheet PDF文件第5页浏览型号CY7C1303CV25的Datasheet PDF文件第6页浏览型号CY7C1303CV25的Datasheet PDF文件第7页 
CY7C1303CV25  
CY7C1306CV25  
PRELIMINARY  
18-Mbit Burst of 2 Pipelined SRAM with  
QDR™ Architecture  
Features  
Functional Description  
Separate independent read and write data ports  
Supports concurrent transactions  
167 MHz clock for high bandwidth  
2.5 ns Clock-to-Valid access time  
2-word burst on all accesses  
The CY7C1303CV25 and CY7C1306CV25 are 2.5V  
Synchronous Pipelined SRAMs, equipped with QDR™  
architecture. QDR architecture consists of two separate ports:  
the read port and the write port to access the memory array. The  
read port has data outputs to support read operations and the  
write port has data inputs to support write operations. QDR  
architecture has separate data inputs and data outputs to  
completely eliminate the need to “turn-around” the data bus  
required with common I/O devices. Access to each port is  
accomplished through a common address bus. The read  
address is latched on the rising edge of the K clock and the write  
address is latched on the rising edge of the K clock. Accesses to  
the QDR read and write ports are completely independent of one  
another. All accesses are initiated synchronously on the rising  
edge of the positive input clock (K). To maximize data  
throughput, both read and write ports are provided with DDR  
interfaces. Therefore, data can be transferred into the device on  
every rising edge of both input clocks (K and K) and out of the  
device on every rising edge of the output clock (C and C, or K  
and K when in single clock mode) thereby maximizing  
performance while simplifying system design. Each address  
location is associated with two 18-bit words (CY7C1303CV25),  
or 36-bit words (CY7C1306CV25) that burst sequentially into or  
out of the device.  
DoubleDataRate(DDR)interfacesonbothreadandwriteports  
(data transferred at 333 MHz) at 167 MHz  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize clock  
skew and flight time mismatches  
Single multiplexed address input bus latches address inputs  
for both read and write ports  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
2.5V core power supply with HSTL inputs and outputs  
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)  
Variable drive HSTL output buffers  
Depth expansion is accomplished with port selects, which  
enables each port to operate independently.  
Expanded HSTL output voltage (1.4V–1.9V)  
JTAG interface  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K/K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Variable Impedance HSTL  
Configurations  
CY7C1303CV25 – 1M x 18  
CY7C1306CV25 – 512K x 36  
Selection Guide  
Description  
167 MHz  
167  
Unit  
MHz  
mA  
Maximum Operating Frequency  
Maximum Operating Current  
500  
Cypress Semiconductor Corporation  
Document #: 001-44701 Rev. *B  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised July 31, 2009  
[+] Feedback  

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