Datasheet > 存储 > SRAM> CY7C1303CV25-167BZXI

CY7C1303CV25-167BZXI

更新时间： 2024-09-13 06:51:39

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
21页	522K
描述
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture

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CY7C1303CV25-167BZXI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA,	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	2.5 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	QDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	2.6 V
最小供电电压 (Vsup)：	2.4 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN SILVER COPPER
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	20
宽度：	13 mm	Base Number Matches：	1

CY7C1303CV25-167BZXI 数据手册

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CY7C1303CV25

CY7C1306CV25

PRELIMINARY

18-Mbit Burst of 2 Pipelined SRAM with

QDR™ Architecture

Features

Functional Description

■

Separate independent read and write data ports

Supports concurrent transactions

167 MHz clock for high bandwidth

2.5 ns Clock-to-Valid access time

2-word burst on all accesses

The CY7C1303CV25 and CY7C1306CV25 are 2.5V

Synchronous Pipelined SRAMs, equipped with QDR™

architecture. QDR architecture consists of two separate ports:

the read port and the write port to access the memory array. The

read port has data outputs to support read operations and the

write port has data inputs to support write operations. QDR

architecture has separate data inputs and data outputs to

completely eliminate the need to “turn-around” the data bus

required with common I/O devices. Access to each port is

accomplished through a common address bus. The read

address is latched on the rising edge of the K clock and the write

address is latched on the rising edge of the K clock. Accesses to

the QDR read and write ports are completely independent of one

another. All accesses are initiated synchronously on the rising

edge of the positive input clock (K). To maximize data

throughput, both read and write ports are provided with DDR

interfaces. Therefore, data can be transferred into the device on

every rising edge of both input clocks (K and K) and out of the

device on every rising edge of the output clock (C and C, or K

and K when in single clock mode) thereby maximizing

performance while simplifying system design. Each address

location is associated with two 18-bit words (CY7C1303CV25),

or 36-bit words (CY7C1306CV25) that burst sequentially into or

out of the device.

❐

■

❐

■

DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 333 MHz) at 167 MHz

■

Two input clocks (K and K) for precise DDR timing

❐

SRAM uses rising edges only

Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

Single multiplexed address input bus latches address inputs

for both read and write ports

■

Separate port selects for depth expansion

Synchronous internally self-timed writes

2.5V core power supply with HSTL inputs and outputs

Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

Expanded HSTL output voltage (1.4V–1.9V)

JTAG interface

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K/K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Variable Impedance HSTL

Configurations

CY7C1303CV25 – 1M x 18

CY7C1306CV25 – 512K x 36

Selection Guide

Description

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

500

Cypress Semiconductor Corporation

Document #: 001-44701 Rev. *B

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised July 31, 2009

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与CY7C1303CV25-167BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1303V25	ETC	获取价格	Memory
CY7C1303V25-100BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1303V25-133BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1303V25-167BZCT	CYPRESS	获取价格	Standard SRAM, 1MX18, 2.5ns, CMOS, PBGA165
CY7C1303V25-200BZC	CYPRESS	获取价格	QDR SRAM, 1MX18, 2.3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, FBGA-165
CY7C130-45DC	ETC	获取价格	x8 Dual-Port SRAM
CY7C130-45DI	ETC	获取价格	x8 Dual-Port SRAM
CY7C130-45DMB	CYPRESS	获取价格	1K x 8 Dual-Port Static Ram
CY7C130-45FMB	CYPRESS	获取价格	Multi-Port SRAM, 1KX8, 45ns, CMOS, CQFP48, CERAMIC, QFP-48
CY7C130-45LC	CYPRESS	获取价格	Multi-Port SRAM, 1KX8, 45ns, CMOS, CQCC48, CERAMIC, LCC-48

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